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privera
  • Member for 11 years, 1 month
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For ESD protection, is it wrong to clamp isolated I/O to chassis ground?
What you are saying makes sense to me for the most part. However, regarding the last paragraph, the transceiver device I'm using is isolated and is referenced to the external galvanic level (ISO_GND). Since the TVS diode is hooked up to the chassis ground, which is at a different galvanic level, I still worry the diodes would conduct arbitrarily if these two galvanic levels diverge too much. Does it make sense?
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For ESD protection, is it wrong to clamp isolated I/O to chassis ground?
It is established by the GND output of an isolated power supply (namely TDN1WISM)
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For ESD protection, is it wrong to clamp isolated I/O to chassis ground?
If my reasoning is correct, the ground potential difference is unknown, as they are floating with respect to each other. Hence, they may or may not be separated by 60+ V. I believe I do fall under Class I btw
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I'm building a 3.3 to 5V level converter with a MOSFET but can't reach 800KHz
Exactly, the distortion is on the rising edge. I hadn't noticed the 3V Vth, thanks for that. I'll also try lowering R2 and get back with results. Thank you
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I'm building a 3.3 to 5V level converter with a MOSFET but can't reach 800KHz
I'll try with the s-d capacitor tomorrow at the lab, I'll let you know.
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I'm building a 3.3 to 5V level converter with a MOSFET but can't reach 800KHz
@KyranF haven't tried but it makes sense. I'll add that to the list.
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I'm building a 3.3 to 5V level converter with a MOSFET but can't reach 800KHz
You're right, I don't need it to be bidirectional. The reason I'm using that circuit is that it experimentally gave a better frequency response than simple inverter I tested.
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