I am designing a BMS circuit for a 48V battery pack.
For the switching mechanism, I thought of using a MOSFET as a switch. I thought I could use an N-channel enhancement MOSFET, but I am having trouble figuring out the MOSFET calculations.
The input to the drain would be 48V. When the MOSFET is on, the source would also be 48V. If I choose a 2V VGs threshold MOSFET, I would need to apply minimum 50V to the gate, right?
I want to control the MOSFET using a microcontroller GPIO pin (3.3V or 5V,) so I need some help here.
Since the gate of the MOSFET has to be VGS volts higher than the source, a special IC is needed to translate the logic level at the CTL lead into the much higher gate voltage.
see electronics.stackexchange.com/questions/188745/… . , only you have to select the adequate IC for yourself, the high-side driver is a generic name. Product recommendations are frowned here. \$\endgroup\$