It would be probably good to protect N-MOSFET with its drain connected to a long (~1 m) piece of wire against ESD. The transistor has its drain-source maximum voltage 20 V, so I decided to choose MMBZ16VALFHT116
(datasheet) transient voltage suppressor with VBR = 16 V. (This one is marketed as a bidirectional TVS, but it looks like there are two unidirectional TVSes.)
Is this TVS correct for this use case?
Do I understand that there are two unidirectional TVSes in the SOT-23 package? (The datasheet uses ordinary diode symbol for them, as I understand it.) Can this be used as one bidirectional TVS (by leaving the anode unconnected)?
I am new to using TVSes.