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Metal-Oxide-Semiconductor Field-Effect Transistor, a type of field-effect transistor (FET). MOSFETs have an insulated gate, the voltage of which determines the conductivity of the device. This can be used for amplifying or switching electronic signals. (From: Wikipedia)
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VSD to ISD graph of MOSFET
I want to compare two graphs provided in datasheets of two MOSFETs. Could anyone please explain what we can conclude if we compare both graphs? Which device has the better forward voltage drop of the …
2
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1
answer
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Two separate ground potentials in LTspice
I want to add two different ground potentials in my LTspice model, one for the power stage and the other for the control signal coming from a function generator and gate driver of a MOSFET. …
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159
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Reverse Conduction/Third Quadrant operation of SiC MOSFET
Good Day,
I have to calculate the Conduction losses of SiC MOSFET and how I am calculating total losses is by segregating the losses into three categoriesincludes, Forward Conduction loss of MOSFET, Reverse … Conduction Loss of MOSFET and Body Diode Reverse Conduction Losses. …
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175
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IGBT and SiC MOSFET conduction losses
For the same application, I can see that an IGBT having the same power rating exhibits 10 times more switching losses but 3 times lesser conduction losses then SiC MOSFET. …
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1
answer
78
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Impact of reverse conduction on control strategy of PMSM motor
On a three-phase inverter working as a Master Control Unit (MCU) to control a permanent magnet synchronous motor, if we replace the IGBTs with SiC MOSFETs, what could be the possible impact of this ch …
2
votes
1
answer
145
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Multiple Source Terminals of SiC MOSFET
I want to know that most of the semiconductor top side cooled package have more than one power source terminal. I can understand by doing so you can minimze the loop inductance of gate driver loop how …
1
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0
answers
160
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dv/dt capability comparison of two MOSFETs
The MOSFET is for a three phase inverter working as MCU (Motor Control Unit) to control a PMSM motor, and will be driven with this gate driver from Infineon. …
4
votes
1
answer
493
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Turning off a MOSFET
What is the advantage of turning off a MOSFET on negative gate to source biased voltage of 5V instead of 0V? … I saw that it is a very common phenomenon in SiC MOSFET as their datasheet always specifies a negative gate to source biased voltage to turn it off while in traditional silicon MOSFETs 0V is taken as turn …
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173
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Why do we need a small external gate to source capacitor for a MOSFET drive circuit?
I have a question regarding a MOSFET half bridge driver circuit. We always connect a small capcitor between the gate and source of both the high side and the low side switch, typically in picofarads. … The answer I have found is to reduce or compensate the effect of internal gate to source Cgs of MOSFET in order to achieve optimum switching performance. …
2
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190
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Difference in simulated and measured Eon, Eoff and Erevreq for double pulse test conducted o...
I conducted a double pulse test (DPT) on an AUIRFP4568 MOSFET in the lab as well as in LTspice. … With the same setup as used in the lab I created a setup in LTspice using the SPICE model of the MOSFET. The behaviour I am getting in terms of switching energies is completely different. …
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496
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What is wrong with my double pulse test setup in LTspice?
I am trying to make double pulse test measurements in LTspice using the spice model of a MOSFET and gate driver we are using in our actual design. … My setup seems to be not working as nothing is appearing on the gate of the low side MOSFET which is the device under test.
I have used the same components which we have used in our actual design. …
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0
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88
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Difference between Safe Operating Area (SOA) of two MOSFETs
I want to compare the Safe Operating Areas of two MOSFETs based on the graphs given by the manufacturers in the datasheets.
Our application is a 24 V inverter. What I concluded based on the informatio …
4
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0
answers
184
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How to mitigate excessive ringing in VDS and VGS
The background of this activity is that this test is performed at 24 V and 10-60 A current with a 150 V, 150 A MOSFET IXTH150N15X4. …
1
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1
answer
795
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Influence of gate resistors and capacitors on driving gate of mosfet
Good Day,
I wannted to ask in a typical gate driving circut of a Mosfet, we always have Rgoff, Rgon,RGS and CGS as shown in below screenschot. … What is the purpose of these components in driving the gate of mosfet and how these components influence the switching of mosfet.
Thanks …
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How to calculate the creepage distance of a package through package outline?
How do I calculate the creepage distance of a package which is not specified by the manufacturer?
By looking at the drawing of the package, could I calculate it? If yes then how?