Edit: as user "Virange" suggested, the \$r_{oc}\$ resistor probably represents the internal resistance of the current source marked as \$i_{SUP}\$.
While there is indeed, as user "Bhuvanesh N" indicated, a very small leakage from the body/bulk to the drain and the source terminals, \$r_{oc}\$ can't represent this leakage, as this leakage is absolutely meaningless for the small signal equivalent circuit.
The leakage current is essentially the leakage current of a reverse-biased diode - the diode's P being the bulk of the FET, and the diode's N being the FET's source, drain, and n-channel. While one might want to take this leakage current into consideration while solving the DC-equivalent circuit, its effects are completely negligible for the small-signal model.
What is relevant for the small-signal model is the body effect. The body effect means \$V_{SB}\$ changes \$V_{TH}\$, and therefore \$I_{DS}\$. In this specific circuit, the input signal changes \$V_{SB}\$, which introduces another effect on the amplified signal via body effect.
In the small-signal model circuit provided in the question, \$r_{o}\$ represents the channel length modulation (due to \$V_{DS}\$ changes), and the body effect (due to \$V_{SB}\$ changes) is repesented by the controlled current source marked as \$-g_{mb}v_s\$.