Consider the circuit below. I am performing a corner simulation in Cadence with temperatures of -40°C, 27°C and 85°C, to see how the gate-source voltage changes with temperature. Before simulating I calculated that by hand.
Since the transistor is in Saturation, the following formula can be applied to calculate the drain current (Sah / Shichman & Hodges Equation).
$$ I_D=\frac{\beta }{2}(V_{GS}-V_T)^2 $$
The formula can be rearranged to calculate \$V_{GS}\$ (since \$ I_D \$ is given by the current source).
$$ V_{GS}=\pm \sqrt{\frac{2}{\beta }I_D} + V_T $$
Furthermore the temperature dependence of the simulated transistor is the following.
$$ V_T=V(T_0)+TCV(T-T_0) $$
We can assume that \$TCV=-1.1mV/°C\$, \$ T_0 = 27°C \$, \$ \beta =\frac{75}{2} \mu A/V^2 \$, \$ I_D=10\mu A \$. Therefore the calculated gate-source voltages for the three different temperatures are
$$ V_{GS}(-40°C)=\pm \sqrt \frac{20\mu A}{\frac{75}{2} \frac{\mu A}{V^2}} + 0.6V - 1.1\frac{mV}{°C}(-40°C-27°C)=1.404V \\ V_{GS}(27°C) = 1.33V \\ V_{GS}(85°C) = 1.266V $$
We can see that with increasing temperature \$ V_T \$ goes down and so does \$ V_{GS} \$. But strangely the simulation shows me the opposite. Only the calculated \$ V_{GS} \$ at \$ 27°C \$ is correct.
Why is that the case? Did I do something wrong in my calculations?