It is known that for smaller technologies, the channel length modulation effect is more prominent. However, is there any condition (biasing,voltage levels, transistor sizing ..etc) from which we can decide to reasonably neglect the channel length modulation effect in MOSFETs?
In a simple common source amplifier, if ro is much larger than any parallel resistance, we ignore it.
I also read that when Vds of a transistor is much larger that VDS,sat it is important to consider ro (I am not sure why though)
In other words, under which conditions we may assume that the channel length modulation has minimal effect on the gain,drain current etc.?